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Hybrid quantum - classical models for nano-sized semiconductor devices
澳门新葡8455最新网站:2016年06月03日 00:00 点击数:

报告人:Bruno Rubino

报告地点:澳门新葡8455最新网站615室

报告澳门新葡8455最新网站:2016年06月08日星期三16:30-17:30

邀请人:

报告摘要:

Recently, following the experimental observation that quantum effects are local- ized in restricted zone of the device, some quantum-classical hybrid models have been introduced. In the hybrid framework, just a well localized (and usually small) part of the device is modeled as quantum, while the rest of the domain is treated classically. The main difficult is to establish a reasonable set of interface conditions. In the talk we present and compare two different approaches. In the first one, following the available literature, we introduce and discuss some sets physical-based interface conditions. In the second one, we derive a new intrinsic hybrid model, obtained modifying the Bohm potential. In this way, we do not need any interface condition and the existence of the hybrid solution is obtained as a limit of a suitably modified quantum model.

主讲人概况:

意大利拉奎拉大学教授、数学系主任。国际著名偏微分方程专家。

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